Size effects on generation recombination noise

We carry out an analytical theory of generation-recombination noise for a two level resistor model which goes beyond those presently available by including the effects of both space charge fluctuations and diffusion current. Finite size effects are found responsible for the saturation of the low frequency current spectral density at high enough applied voltages. The saturation behaviour is controlled essentially by the correlations coming from the long range Coulomb interaction. It is suggested that the saturation of the current fluctuations for high voltage bias constitutes a general feature of generation-recombination noise.Comment: 3 pages, 1 figure. To appear in Applied Physics Letters (2 December 2002 issue

Fractional exclusion statistics and shot noise in ballistic conductors

We study the noise properties of ballistic conductors with carriers satisfying fractional exclusion statistics. To test directly the nature of exclusion statistics we found that systems under weakly degenerate conditions should be considered. Typical of these systems is that the chemical potential, $\mu$ is in the thermal range $|\mu |<3k_{B}T$. In these conditions the noise properties under current saturation are found to depend upon the statistical parameter $g$, displaying suppressed shot noise for $1/2\leq g\leq 1$, and enhanced shot noise for $0<g<1/2$, according to the attractive or repulsive nature of the carrier exclusion statistics.Comment: 6 pages, 5 figures, accepted for publication in Phys. Rev.

Shot Noise in Linear Macroscopic Resistors

We report on a direct experimental evidence of shot noise in a linear macroscopic resistor. The origin of the shot noise comes from the fluctuation of the total number of charge carriers inside the resistor associated with their diffusive motion under the condition that the dielectric relaxation time becomes longer than the dynamic transit time. Present results show that neither potential barriers nor the absence of inelastic scattering are necessary to observe shot noise in electronic devices.Comment: 10 pages, 5 figure

Shot-noise suppression in Schottky barrier diodes

We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes negligible the effects of the Coulomb interaction on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the cross-over between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot-noise. Similar ideas can be used to interpret the noise properties of others semiconductor devices.Comment: 3 page

Fluctuations of Complex Networks: Electrical Properties of Single Protein Nanodevices

We present for the first time a complex network approach to the study of the electrical properties of single protein devices. In particular, we consider an electronic nanobiosensor based on a G-protein coupled receptor. By adopting a coarse grain description, the protein is modeled as a complex network of elementary impedances. The positions of the alpha-carbon atoms of each amino acid are taken as the nodes of the network. The amino acids are assumed to interact electrically among them. Consequently, a link is drawn between any pair of nodes neighboring in space within a given distance and an elementary impedance is associated with each link. The value of this impedance can be related to the physical and chemical properties of the amino acid pair and to their relative distance. Accordingly, the conformational changes of the receptor induced by the capture of the ligand, are translated into a variation of its electrical properties. Stochastic fluctuations in the value of the elementary impedances of the network, which mimic different physical effects, have also been considered. Preliminary results concerning the impedance spectrum of the network and its fluctuations are presented and discussed for different values of the model parameters.Comment: 16 Pages and 10 Figures published in SPIE Proceedings of the II International Symposium on Fluctuation and Noise, Maspalomas,Gran Canaria,Spain, 25-28 May 200

Modelization of Thermal Fluctuations in G Protein-Coupled Receptors

We simulate the electrical properties of a device realized by a G protein coupled receptor (GPCR), embedded in its membrane and in contact with two metallic electrodes through which an external voltage is applied. To this purpose, recently, we have proposed a model based on a coarse graining description, which describes the protein as a network of elementary impedances. The network is built from the knowledge of the positions of the C-alpha atoms of the amino acids, which represent the nodes of the network. Since the elementary impedances are taken depending of the inter-nodes distance, the conformational change of the receptor induced by the capture of the ligand results in a variation of the network impedance. On the other hand, the fluctuations of the atomic positions due to thermal motion imply an impedance noise, whose level is crucial to the purpose of an electrical detection of the ligand capture by the GPCR. Here, in particular, we address this issue by presenting a computational study of the impedance noise due to thermal fluctuations of the atomic positions within a rhodopsin molecule. In our model, the C-alpha atoms are treated as independent, isotropic, harmonic oscillators, with amplitude depending on the temperature and on the position within the protein (alpha-helix or loop). The relative fluctuation of the impedance is then calculated for different temperatures.Comment: 5 pages, 2 figures, Proceeding of the 18-th International Conference on Fluctuations and Noise, 19-23 September 2005, Salamanca, Spain -minor proofreadings

Shot-noise anomalies in nondegenerate elastic diffusive conductors

We present a theoretical investigation of shot-noise properties in nondegenerate elastic diffusive conductors. Both Monte Carlo simulations and analytical approaches are used. Two new phenomena are found: (i) the display of enhanced shot noise for given energy dependences of the scattering time, and (ii) the recovery of full shot noise for asymptotic high applied bias. The first phenomenon is associated with the onset of negative differential conductivity in energy space that drives the system towards a dynamical electrical instability in excellent agreement with analytical predictions. The enhancement is found to be strongly amplified when the dimensionality in momentum space is lowered from 3 to 2 dimensions. The second phenomenon is due to the suppression of the effects of long range Coulomb correlations that takes place when the transit time becomes the shortest time scale in the system, and is common to both elastic and inelastic nondegenerate diffusive conductors. These phenomena shed new light in the understanding of the anomalous behavior of shot noise in mesoscopic conductors, which is a signature of correlations among different current pulses.Comment: 9 pages, 6 figures. Final version to appear in Phys. Rev.

Impact of nonlocal interactions in dissipative systems: towards minimal-sized localized structures

In order to investigate the size limit on spatial localized structures in a nonlinear system, we explore the impact of linear nonlocality on their domains of existence and stability. Our system of choice is an optical microresonator containing an additional metamaterial layer in the cavity, allowing the nonlocal response of the material to become the dominating spatial process. In that case, our bifurcation analysis shows that this nonlocality imposes a new limit on the width of localized structures going beyond the traditional diffraction limit.Comment: 4 pages, 4 figure

Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions

A general formulation of boundary conditions for semiconductor-metal contacts follows from a phenomenological procedure sketched here. The resulting boundary conditions, which incorporate only physically well-defined parameters, are used to study the classical unipolar drift-diffusion model for the Gunn effect. The analysis of its stationary solutions reveals the presence of bistability and hysteresis for a certain range of contact parameters. Several types of Gunn effect are predicted to occur in the model, when no stable stationary solution exists, depending on the value of the parameters of the injecting contact appearing in the boundary condition. In this way, the critical role played by contacts in the Gunn effect is clearly stablished.Comment: 10 pages, 6 Post-Script figure

Coupled-mode theory for photonic band-gap inhibition of spatial instabilities

We study the inhibition of pattern formation in nonlinear optical systems using intracavity photonic crystals. We consider mean-field models for singly and doubly degenerate optical parametric oscillators. Analytical expressions for the new (higher) modulational thresholds and the size of the "band gap" as a function of the system and photonic crystal parameters are obtained via a coupled-mode theory. Then, by means of a nonlinear analysis, we derive amplitude equations for the unstable modes and find the stationary solutions above threshold. The form of the unstable mode is different in the lower and upper parts of the band gap. In each part there is bistability between two spatially shifted patterns. In large systems stable wall defects between the two solutions are formed and we provide analytical expressions for their shape. The analytical results are favorably compared with results obtained from the full system equations. Inhibition of pattern formation can be used to spatially control signal generation in the transverse plane